ECE 3450
Semiconductor Devices
Georgia Institute of Technology-Main Campus
John Cressler 2 sections · 2 terms · 2015–2016 3.38GPA
Published grade shares · 2 sections · 2015–2016
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23 reported responses
Scale 1–5Shyh-Chiang Shen 5 sections · 5 terms · 2014–2021 3.31GPA
Published grade shares · 5 sections · 2014–2021
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7 reported responses
Scale 1–5Azad Naeemi 3 sections · 3 terms · 2018–2025 3.26GPA
Published grade shares · 3 sections · 2018–2025
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21 reported responses
Scale 1–5Benjamin Klein 3 sections · 3 terms · 2014–2015 2.91GPA
Published grade shares · 3 sections · 2014–2015
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3 reported responses
Scale 1–5Russell Dupuis 5 sections · 5 terms · 2013–2019 2.88GPA
Published grade shares · 5 sections · 2013–2019
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8 reported responses
Scale 1–5Paul Yoder 3 sections · 3 terms · 2022–2025 2.74GPA
Published grade shares · 3 sections · 2022–2025
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6 reported responses
Scale 1–5William Doolittle 1 sections · 1 term · 2015 · Limited sample 3.71GPA
Published grade shares · 1 section · 2015 · Limited sample
4 reported responses
Scale 1–5Jeffrey Davis 1 sections · 1 term · 2024 · Limited sample 3.15GPA
Published grade shares · 1 section · 2024 · Limited sample
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